v rrm = 1200 v - 1600 v i f(av) = 200 a features ? high surge capability three tower package ? isolation type package ? not esd sensitive parameter symbol unit repetitive peak reverse voltage v rrm v rms reverse voltage v rms v dc blocking voltage v dc v maximum ratings, at t j = 25 c, unless otherwise specified 1200 1600 1600 1400 1200 conditions msrt200120(a)d msrt200140(a)d msrt200160(a)d 1400 990 1131 848 msrt200120(a)d thru msrt200160(a)d ? types from 1200 v to 1600 v v rrm ? electrically isolated base plate silicon standard recover y diode dc blocking voltage v dc v operating temperature t j c storage temperature t stg c parameter symbol unit average forward current (per leg) i f(av) a maximum instantaneous forward voltage (per leg) a ma thermal characteristics maximum thermal resistance, junction - case (per leg) r jc c/w t c = 140 c 200 200 200 3000 a 0.35 0.35 t j = 150 c t j = 25 c t p = 8.3 ms, half sine 3000 3000 0.35 1600 1.1 1.1 -55 to 150 555 1400 1200 10 peak forward surge current (per leg) i fsm 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 msrt200120(a)d msrt200140(a)d v conditions electrical characteristics, at tj = 25 c, unless otherwise specified i fm = 200 a, t j = 25 c msrt200160(a)d 1.1 maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
msrt200120(a)d thru msrt200160(a)d www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. msrt200120(a)d thru msrt200160(a)d www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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